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A Product Line of
Diodes Incorporated
DMP1245UFCL
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
Features and Benefits
PCB footprint of 2.56mm
V (BR)DSS
-12V
R DS(on) max
29m Ω @V GS = -4.5V
45m Ω @V GS = -2.5V
60m Ω @V GS = -1.8V
100m Ω @V GS = -1.5V
I D max
-6.6 A
-5.3 A
-4.6 A
-3.5 A
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Typical off board profile of 0.5mm - ideally suited for thin
applications
Low R DS(ON) – minimizes conduction losses
2
3kV ESD Protected Gate – protected against human borne
ESD
“Lead-Free”, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Application
Mechanical Data
This device provides a high performance, low R DS(ON) P channel
MOSFETs in the thermally and space efficient X1-DFN1616-6
package. The low R DS(ON) of this MOSFET ensures conduction
losses are kept making it ideal for use as a:
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Case: X1-DFN1616-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free Plating (NiPdAu Finish over Copper leadframe).
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Battery disconnect switch
Load switch for power management functions
X1-DFN1616-6
Type E
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Pin 1
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.04 grams (approximate)
Drain
Gate
Gate
Protection
Diode
Source
Top View
Bottom View
Device symbol
Top View
Pin-Out
Ordering Information (Note 3)
Product
DMP1245UFCL-7
Marking
P5
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
P5
YM
P5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
1 of 7
www.diodes.com
November 2011
? Diodes Incorporated
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